Electric field control of magnetization dynamics in ZnMnSe/ZnBeSe diluted-magnetic-semiconductor heterostructures

TL;DR

This study demonstrates electric field control over magnetization dynamics in ZnMnSe/ZnBeSe heterostructures by tuning the spin-lattice relaxation time via gate voltage, without affecting static magnetization.

Contribution

It introduces a method to control magnetization dynamics separately from static magnetization using electric fields in diluted magnetic semiconductors.

Findings

SLR time of Mn2+ ions tuned by two orders of magnitude

Electric field modulates spin-lattice relaxation via 2DEG

Static magnetization remains unaffected by 2DEG density

Abstract

We show that the magnetization dynamics in diluted magnetic semiconductors can be controlled separately from the static magnetization by means of an electric field. The spin-lattice relaxation (SLR) time of magnetic Mn2+ ions was tuned by two orders of magnitude by a gate voltage applied to n-type modulation-doped (Zn,Mn)Se/(Zn,Be)Se quantum wells. The effect is based on providing an additional channel for SLR by a two-dimensional electron gas (2DEG). The static magnetization responsible for the giant Zeeman spin splitting of excitons was not influenced by the 2DEG density.