Calculations of two-color interband optical injection and control of carrier population, spin, current, and spin current in bulk semiconductors

TL;DR

This paper presents calculations of quantum interference effects enabling coherent control of carrier and spin dynamics in bulk semiconductors, with detailed spectra for five materials using advanced Hamiltonian models.

Contribution

It provides comprehensive injection spectra calculations including remote band effects and analytical expressions, advancing understanding of optical control in semiconductors.

Findings

Injection spectra vary across five semiconductors studied.

Remote band effects significantly influence injection spectra.

Analytical expressions agree with nonperturbative calculations in certain regimes.

Abstract

Quantum interference between one- and two-photon absorption pathways allows coherent control of interband transitions in unbiased bulk semiconductors; carrier population, carrier spin polarization, photocurrent injection, and spin current injection can all be controlled. We calculate injection spectra for these effects using a 14x14 k.p Hamiltonian including remote band effects for five bulk semiconductors of zinc-blende symmetry: InSb, GaSb, InP, GaAs, and ZnSe. Microscopic expressions for spin-current injection and spin control accounting for spin split bands are presented. We also present analytical expressions for the injection spectra derived in the parabolic-band approximation and compare these with the calculation nonperturbative in k.