Gamma radiation exposure of MCT diode arrays
F.F. Sizov, I.O. Lysiuk, J.V. Gumenjuk-Sichevska, S.G. Bunchuk, V.V., Zabudsky
TL;DR
This study examines how gamma radiation affects the electrical properties of LWIR mercury cadmium telluride (MCT) diode arrays, revealing changes in resistance and current transport mechanisms after exposure.
Contribution
It provides new insights into the gamma radiation effects on MCT diode arrays' electrical characteristics and models the current transport considering trap state occupation.
Findings
Resistance-area product changes post-irradiation
Altered current transport mechanisms observed
Trap state occupation impacts electrical behavior
Abstract
Investigations of electrical properties of long-wavelength infrared (LWIR) mercury cadmium telluride (MCT) arrays exposed to gamma-radiation have been performed. Resistance-area product characteristics of LWIR n{+}-p photodiodes have been investigated using microprobe technique at T=78 K before and after an exposure to various doses of gamma-radiation. The current transport mechanisms for those structures are described within the framework of the balance equation model taking into account the occupation of the trap states in the band gap.
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