Hall coefficient and magnetoresistance of 2D spin-polarized electron systems

TL;DR

This paper investigates how in-plane magnetic fields affect the Hall coefficient and magnetoresistance in 2D spin-polarized electron systems, revealing that screening and electron interactions play key roles in their behavior.

Contribution

The study provides a semi-classical calculation of the Hall coefficient and magnetoresistance considering electron-electron interactions and screening effects in 2D spin-polarized systems.

Findings

Hall coefficient is independent of in-plane magnetic field due to suppressed screening effects.

Magnetoresistance is strongly field dependent because of changes in screening.

Electron-electron interactions influence the transport properties in 2D systems.

Abstract

Recent measurements of the 2D Hall resistance show that the Hall coefficient is independent of the applied in-plane magnetic field, i.e., the spin-polarization of the system. We calculate the weak-field Hall coefficient and the magnetoresistance of a spin polarized 2D system using the semi-classical transport approach based on the screening theory. We solve the coupled kinetic equations of the two carrier system including electron-electron interaction. We find that the in-plane magnetic field dependence of the Hall coefficient is suppressed by the weakening of screening and the electron-electron interaction. However, the in-plane magnetoresistance is mostly determined by the change of the screening of the system, and can therefore be strongly field dependent.