Doped carrier formulation and mean-field theory of the tt't''J model
Tiago C. Ribeiro, Xiao-Gang Wen

TL;DR
This paper introduces a new doped carrier formulation and a mean-field theory for the tt't''J model, providing insights into high-temperature superconductivity and reproducing phase diagrams of cuprates.
Contribution
It develops a novel fermionic mean-field approach based on doped carriers, revealing spinon-dopon mixing as a mechanism for superconductivity in the tt't''J model.
Findings
Reproduces semi-quantitative phase diagrams of cuprates
Accounts for local antiferromagnetic and d-wave superconducting correlations
Highlights the role of t', t'' in enhancing superconductivity
Abstract
In the generalized-tJ model the effect of the large local Coulomb repulsion is accounted for by restricting the Hilbert space to states with at most one electron per site. In this case the electronic system can be viewed in terms of holes hopping in a lattice of correlated spins, where holes are the carriers doped into the half-filled Mott insulator. To explicitly capture the interplay between the hole dynamics and local spin correlations we derive a new formulation of the generalized-tJ model where doped carrier operators are used instead of the original electron operators. This ``doped carrier'' formulation provides a new starting point to address doped spin systems and we use it to develop a new, fully fermionic, mean-field description of doped Mott insulators This mean-field approach reveals a new mechanism for superconductivity, namely spinon-dopon mixing, and we apply it to the…
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.
