Tunable temperature induced magnetization jump in a GdVO3 single crystal

TL;DR

This study reports a unique temperature-induced magnetization jump in GdVO3 single crystals at 0.8 K, revealing a history-dependent magnetic state and domain rearrangements in an otherwise homogeneous antiferromagnetic phase.

Contribution

It uncovers a novel magnetic memory effect and domain behavior in GdVO3, expanding understanding of antiferromagnetic materials at very low temperatures.

Findings

Magnetization jump occurs at 0.8 K along the a-axis.

Below 0.8 K, the material shows no coercivity or remanence.

The magnetic state exhibits history dependence and domain reconfiguration.

Abstract

We report a novel feature of the temperature induced magnetization jump observed along the a-axis of the GdVO3 single crystal at temperature TM = 0.8 K. Below TM, the compound shows no coercivity and remanent magnetization indicating a homogenous antiferromagnetic structure. However, we will demonstrate that the magnetic state below TM is indeed history dependent and it shows up in different jumps in the magnetization only when warming the sample through TM. Such a magnetic memory effect is highly unusual and suggesting different domain arrangements in the supposedly homogenous antiferromagnetic phase of the compound.