First-Principles Study of Electronic Structure in $\alpha$-(BEDT-TTF)$_2$I$_3$ at Ambient Pressure and with Uniaxial Strain
Hiori Kino, Tsuyoshi Miyazaki

TL;DR
This study uses density functional theory to analyze how uniaxial strain affects the electronic structure of $ ext{(BEDT-TTF)}_2 ext{I}_3$, revealing anisotropic Dirac cones and temperature-dependent carrier densities.
Contribution
It provides a detailed first-principles analysis of strain effects on the electronic properties of $ ext{(BEDT-TTF)}_2 ext{I}_3$, including tight-binding parameter extraction and temperature behavior.
Findings
Confirmation of anisotropic Dirac cone dispersion near the chemical potential.
Distinct effects of uniaxial strain along the a- and b-axes.
Carrier densities exhibit $T^2$ dependence at low temperatures.
Abstract
Within the framework of the density functional theory, we calculate the electronic structure of -(BEDT-TTF)I at 8K and room temperature at ambient pressure and with uniaxial strain along the - and -axes. We confirm the existence of anisotropic Dirac cone dispersion near the chemical potential. We also extract the orthogonal tight-binding parameters to analyze physical properties. An investigation of the electronic structure near the chemical potential clarifies that effects of uniaxial strain along the a-axis is different from that along the b-axis. The carrier densities show dependence at low temperatures, which may explain the experimental findings not only qualitatively but also quantitatively.
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