Control of spin relaxation in semiconductor double quantum dots

TL;DR

This paper presents a method to significantly control spin relaxation times in semiconductor double quantum dots using small gate voltages, with detailed analysis of various influencing factors.

Contribution

It introduces a scheme to manipulate spin relaxation times in double quantum dots, achieving up to twelve orders of magnitude variation through gate voltage control.

Findings

Spin relaxation time varies up to twelve orders of magnitude with gate voltage.

Dot size, barrier height, inter-dot distance, and magnetic field significantly affect spin relaxation.

Conditions for achieving large variation in relaxation time are discussed.

Abstract

We propose a scheme to manipulate the spin relaxation in vertically coupled semiconductor double quantum dots. Up to {\em twelve} orders of magnitude variation of the spin relaxation time can be achieved by a small gate voltage applied vertically on the double dot. Different effects such as the dot size, barrier height, inter-dot distance, and magnetic field on the spin relaxation are investigated in detail. The condition to achieve a large variation is discussed.