Effect of the Triplet State on the Random Telegraph Signal in Si n-MOSFETs

TL;DR

This study investigates how strong magnetic fields influence the random telegraph signal in silicon n-MOSFETs, revealing significant changes linked to the triplet state of trapping centers and electron gas polarization.

Contribution

It introduces a model incorporating the triplet state and electron polarization to explain magnetic field effects on RTS in silicon n-MOSFETs.

Findings

RTS characteristic time ratio varies by 3 orders of magnitude with magnetic field

Behavior is similar for in-plane and perpendicular magnetic fields

Model including triplet state and electron polarization explains the data

Abstract

We report on the static magnetic field dependence of the random telegraph signal (RTS) in a submicrometer silicon n-metal-oxide-semiconductor field-effect transistor. Using intense magnetic fields and $^{3}$He temperatures, we find that the characteristic time ratio changes by 3 orders of magnitude when the field increases from 0 to 12 T. Similar behaviour is found when the static field is either in-plane or perpendicular to the two dimensional electron gas. The experimental data can be explained by considering a model which includes the triplet state of the trapping center and the polarization of the channel electron gas.