Poly-MTO, {(CH_3)_{0.92} Re O_3}_\infty, a Conducting Two-Dimensional Organometallic Oxide

TL;DR

Poly-MTO is a novel two-dimensional organometallic oxide with tunable electronic properties, exhibiting complex low-temperature resistivity behavior and potential for electronic applications, characterized through various experimental techniques.

Contribution

This study introduces poly-MTO as the first 2D organometallic hybrid with tunable electronic properties and detailed analysis of its low-temperature transport behavior.

Findings

Resistivity follows ln(1/T) and √T dependencies at low temperatures.

Intercalation of donor molecules increases insulating behavior.

Magnetoresistance indicates spatial localization of electrons.

Abstract

Polymeric methyltrioxorhenium, {(CH_{3})_{0.92}ReO_{3}}_{\infty} (poly-MTO), is the first member of a new class of organometallic hybrids which adopts the structural pattern and physical properties of classical perovskites in two dimensions (2D). We demonstrate how the electronic structure of poly-MTO can be tailored by intercalation of organic donor molecules, such as tetrathiafulvalene (TTF) or bis-(ethylendithio)-tetrathiafulvalene (BEDT-TTF), and by the inorganic acceptor SbF$_3$. Integration of donor molecules leads to a more insulating behavior of poly-MTO, whereas SbF$_3$ insertion does not cause any significant change in the resistivity. The resistivity data of pure poly-MTO is remarkably well described by a two-dimensional electron system. Below 38 K an unusual resistivity behavior, similar to that found in doped cuprates, is observed: The resistivity initially increases approximately as $\rho \sim$ ln$(1/T$) before it changes into a $\sqrt{T}$ dependence below 2 K. As an explanation we suggest a crossover from purely two-dimensional charge-carrier diffusion within the \{ReO$_2$\}$_{\infty}$ planes at high temperatures to three-dimensional diffusion at low temperatures in a disorder-enhanced electron-electron interaction scenario (Altshuler-Aronov correction). Furthermore, a linear positive magnetoresistance was found in the insulating regime, which is caused by spatial localization of itinerant electrons at some of the Re atoms, which formally adopt a $5d^1$ electronic configuration. X-ray diffraction, IR- and ESR-studies, temperature dependent magnetization and specific heat measurements in various magnetic fields suggest that the electronic structure of poly-MTO can safely be approximated by a purely 2D conductor.