Spin dynamics in a compound semiconductor spintronic structure with a Schottky barrier

TL;DR

This paper theoretically investigates the non-equilibrium spin dynamics of electrons injected into a GaAs semiconductor with a Schottky barrier, revealing rapid spin relaxation and temperature-dependent spin penetration depths.

Contribution

It provides a detailed theoretical analysis of spin relaxation and valley redistribution in a GaAs structure with a Schottky barrier, highlighting temperature effects on spin penetration.

Findings

Spin polarization decays within 50-100 nm at 4.2 K

Spin penetration depth halves at room temperature

Spin scattering length varies across valleys

Abstract

We demonstrate theoretically that spin dynamics of electrons injected into a GaAs semiconductor structure through a Schottky barrier possesses strong non-equilibrium features. Electrons injected are redistributed quickly among several valleys. Spin relaxation driven by the spin-orbital coupling in the semiconductor is very rapid. At T = 4.2 K, injected spin polarization decays on a distance of the order of 50 - 100 nm from the interface. This spin penetration depth reduces approximately by half at room temperature. The spin scattering length is different for different valleys.