Conductance quantization in etched Si/SiGe quantum point contacts
G. Scappucci (1), L. Di Gaspare (1), E. Giovine (2), A. Notargiacomo, (2), R. Leoni (2), F. Evangelisti (1, 2) ((1) Dipartimento di Fisica, "E. Amaldi", Universita' Roma TRE, Roma, Italy, (2) Istituto di Fotonica e, Nanotecnologie, IFN-CNR, Roma, Italy)
TL;DR
This paper reports on the fabrication of Si/SiGe quantum point contacts that exhibit conductance quantization, including a half-plateau, indicating adiabatic transmission with valley and spin degeneracy removal.
Contribution
It demonstrates the creation of etched Si/SiGe quantum point contacts with conductance quantization and evidence of valley and spin degeneracy lifting.
Findings
Observation of conductance quantization near 1e2/h
Detection of a half 1e2/h plateau
Evidence of valley and spin degeneracy removal
Abstract
We fabricated strongly confined Schottky-gated quantum point contacts by etching Si/SiGe heterostructures and observed intriguing conductance quantization in units of approximately 1e2/h. Non-linear conductance measurements were performed depleting the quantum point contacts at fixed mode-energy separation. We report evidences of the formation of a half 1e2/h plateau, supporting the speculation that adiabatic transmission occurs through 1D modes with complete removal of valley and spin degeneracies.
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.