Transient tunneling current of single electron transistors

TL;DR

This paper theoretically investigates the transient tunneling current in single electron transistors, analyzing temperature effects, tunneling rate influence, and oscillation structures in germanium quantum dot-based transistors.

Contribution

It applies a time-dependent current formula to study temperature effects and tunneling rate influence on transient current in SETs and analyzes oscillation structures in germanium quantum dot transistors.

Findings

Tunneling rate ratio significantly affects transient current features

Temperature influences the transient tunneling current

Oscillation structures are observed in germanium quantum dot transistors

Abstract

The transient tunneling current of single electron transistors (SETs) is theoretically investigated. The time-dependent current formula given by Jauho, Wingreen and Meir [Phys. Rev. B 50, 5528 (1994)] is applied to study the temperature effect on the transient current through a single quantum dot embedded into asymmetry barrier. It is found that the tunneling rate ratio significantly influences the feature of transient current. Finally, the oscillation structures on the exponential growth transient current of single hole transistors composed of germanium quantum dots is analyzed.