Radiation-induced oscillatory-magnetoresistance in a tilted magnetic field in $GaAs/Al_{x}Ga_{1-x}As$ devices

TL;DR

This study investigates how microwave-induced magnetoresistance oscillations in high mobility 2D electron systems depend on the orientation of an applied magnetic field, revealing the dominant role of the perpendicular component.

Contribution

It demonstrates that the radiation-induced oscillations are primarily influenced by the perpendicular magnetic field component, with minimal effect from the parallel component at high tilt angles.

Findings

Oscillations depend on the perpendicular magnetic field component.

Parallel magnetic field component has negligible effect at high tilt angles.

Characteristic field $B_f$ correlates with the perpendicular field component.

Abstract

We examine the microwave-photoexcited magnetoresistance oscillations in a tilted magnetic field in the high mobility two-dimensional electron system. In analogy to the 2D Shubnikov-de Haas effect, the characteristic field, $B_{f}$, and the period of the radiation-induced magnetoresistance oscillations appears dependent upon the component of the applied magnetic field that is perpendicular to the plane of the 2DES. In addition, we find that a parallel component, $B_{//}$, in the range of $0.6 < B_{//} < 1.2$ Tesla, at a tilt angle of $\theta = 80^{0}$, leaves the oscillatory pattern essentially unchanged.