A Three-dimensional simulation study of the performance of Carbon Nanotube Field Effect Transistors with doped reservoirs and realistic geometry

TL;DR

This study uses 3D quantum simulations to evaluate the performance and scaling of doped CNT-FETs with various geometries, revealing advantages over silicon in current and high-frequency operation.

Contribution

It introduces a comprehensive 3D simulation framework for CNT-FETs with doped reservoirs and realistic geometries, analyzing short channel effects and multi-CNT configurations.

Findings

Double gate devices achieve near-ideal subthreshold slope and DIBL.

Parallel CNT configurations yield higher on-currents per width than silicon.

High-frequency performance of CNT-FETs is highly promising.

Abstract

In this work, we simulate the expected device performance and the scaling perspectives of Carbon nanotube Field Effect Transistors (CNT-FETs), with doped source and drain extensions. The simulations are based on the self-consistent solution of the 3D Poisson-Schroedinger equation with open boundary conditions, within the Non-Equilibrium Green's Function formalism, where arbitrary gate geometry and device architecture can be considered. The investigation of short channel effects for different gate configurations and geometry parameters shows that double gate devices offer quasi ideal subthreshold slope and DIBL without extremely thin gate dielectrics. Exploration of devices with parallel CNTs show that On currents per unit width can be significantly larger than the silicon counterpart, while high-frequency performance is very promising.