Disorder and electron interaction control in low-doped silicon metal-oxide-semiconductor field effect transistors

TL;DR

This study demonstrates how sodium doping and electric fields can be used to control disorder and electron interactions in silicon MOSFETs, impacting their electronic properties.

Contribution

It introduces a method to tune disorder and electron-electron interactions in silicon MOSFETs via sodium doping and electric field manipulation.

Findings

Potential fluctuations are controllable by ion density and position.

Ion mobility allows dynamic adjustment of disorder.

Device can modulate electron interaction strength.

Abstract

We fabricated silicon metal-oxide-semiconductor field effect transistors where an additional sodium-doped layer was incorporated into the oxide to create potential fluctuations at the Si-SiO2 interface. The amplitude of these fluctuations is controlled by both the density of ions in the oxide and their position relative to the Si-SiO2 interface. Owing to the high mobility of the ions at room temperature, it is possible to move them with the application of a suitable electric field. We show that, in this configuration, such a device can be used to control both the disorder and the electron-electron interaction strength at the Si-SiO2 interface.