Magnetoconductivity of Hubbard bands induced in Silicon MOSFETs

TL;DR

This study uses magnetoconductivity measurements to provide evidence for Hubbard bands formed by sodium impurities in silicon MOSFETs, revealing the nature of electronic states at low temperature and electron density.

Contribution

It demonstrates the existence of Hubbard bands in silicon MOSFETs induced by sodium impurities and characterizes the electronic states within these bands.

Findings

Evidence for Hubbard bands from magnetoconductivity data

Splitting of impurity band into upper and lower Hubbard bands

Identification of the nature of states in each Hubbard band

Abstract

Sodium impurities are diffused electrically to the oxide-semiconductor interface of a silicon MOSFET to create an impurity band. At low temperature and at low electron density, the band is split into an upper and a lower sections under the influence of Coulomb interactions. We used magnetoconductivity measurements to provide evidence for the existence of Hubbard bands and determine the nature of the states in each band.