A theoretical investigation into the microwave spectroscopy of a phosphorus-donor charge-qubit in silicon: Coherent control in the Si:P quantum computer architecture

TL;DR

This paper provides a theoretical framework for microwave spectroscopy of a phosphorus-donor charge qubit in silicon, predicting experimental outcomes and parameter extraction methods for quantum computing applications.

Contribution

It introduces a detailed theoretical analysis of the P$_2^+$ donor pair system, including Hamiltonian parameter calculation and dissipative dynamics modeling, advancing understanding of silicon-based quantum bits.

Findings

Predicted dephasing times and Rabi frequency ratios for the system.

Provided probability distributions for key system parameters.

Outlined methods to extract physical parameters from experimental data.

Abstract

We present a theoretical analysis of a microwave spectroscopy experiment on a charge qubit defined by a P$_2^+$ donor pair in silicon, for which we calculate Hamiltonian parameters using the effective-mass theory of shallow donors. We solve the master equation of the driven system in a dissipative environment to predict experimental outcomes. We describe how to calculate physical parameters of the system from such experimental results, including the dephasing time, $T_2$, and the ratio of the resonant Rabi frequency to the relaxation rate. Finally we calculate probability distributions for experimentally relevant system parameters for a particular fabrication regime.