Electrically detected electron spin resonance in a high mobility silicon quantum well

TL;DR

This study investigates electron spin resonance in a high-mobility silicon quantum well, revealing that ESR signals are primarily due to spin polarization reduction and measuring a long spin relaxation time of about 1 ms.

Contribution

It provides the first detailed analysis of ESR in high-mobility silicon quantum wells, highlighting the dominant role of spin polarization changes and long T_1 times.

Findings

ESR signal mainly caused by spin polarization reduction

Longitudinal spin relaxation time T_1 approximately 1 ms

Suppression of Rashba effects due to high-frequency spin precession

Abstract

The resistivity change due to electron spin resonance (ESR) absorption is investigated in a high-mobility two-dimensional electron system formed in a Si/SiGe heterostructure. Results for a specific Landau level configuration demonstrate that the primary cause of the ESR signal is a reduction of the spin polarization, not the effect of electron heating. The longitudinal spin relaxation time T_1 is obtained to be of the order of 1 ms in an in-plane magnetic field of 3.55 T. The suppression of the effect of the Rashba fields due to high-frequency spin precession explains the very long T_1.