Implantation of labelled single nitrogen vacancy centers in diamond using 15N
J. R. Rabeau*, P. Reichart, G. Tamanyan, D. N. Jamieson, S. Prawer, F., Jelezko, T. Gaebel, I. Popa, M. Domhan, J. Wrachtrup

TL;DR
This study demonstrates a method to implant and identify labeled 15N nitrogen-vacancy centers in diamond, enabling measurement of NV- center formation yield through hyperfine spectroscopy.
Contribution
It introduces a technique for implanting 15N into diamond and measuring NV- center formation yield via hyperfine coupling analysis.
Findings
1 in 40 implanted 15N atoms form observable NV- centers
Hyperfine spectrum distinguishes 15NV- from native 14NV- centers
Method enables quantification of NV- formation efficiency
Abstract
Nitrogen-vacancy (NV-) color centers in diamond were created by implantation of 7 keV 15N (I = 1/2) ions into type IIa diamond. Optically detected magnetic resonance was employed to measure the hyperfine coupling of the NV- centers. The hyperfine spectrum from 15NV- arising from implanted 15N can be distinguished from 14NV- centers created by native 14N (I = 1) sites. Analysis indicates 1 in 40 implanted 15N atoms give rise to an optically observable 15NV- center. This report ultimately demonstrates a mechanism by which the yield of NV- center formation by nitrogen implantation can be measured.
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