Composition, structure, and luminescent properties of SiOxNy(Si) composite layers containing Si nanocrystals
V.G. Baru, I. N. Dyuzhikov, V. I. Pokalyakin, O. F. Shevchenko, E. A., Skryleva, O. M. Zhigalina
TL;DR
This study explores how the chemical composition and structure of SiOxNy(Si) composite layers influence their luminescent properties, revealing optimal compositions for light emission and the effects of annealing on nanocrystal growth and photoluminescence.
Contribution
It demonstrates the relationship between composition, structure, and luminescence in SiOxNy(Si) layers, highlighting the effects of annealing and nanocrystal formation on photoluminescence.
Findings
Maximum PL intensity at 500-600 nm for ~10 at.% Si excess
Annealing causes significant growth of Si nanocrystals and PL intensity
PL spectra shape remains unchanged despite nanocrystal growth
Abstract
A relationship between the chemical composition, structure and luminescent properties of light-emitting SiOxNy(Si) composite layers with Si nanocrystals is demonstrated. Photoluminescence (PL) with a maximum of intensity at 500-600 nm is observed in a narrow region of chemical compositions with relatively small Si excess (about 10 at. %). Composite layers structure is studied by means of HRTEM. Appearance of nanocrystals due to annealing is accompanied by substantial growth (30-40 times) of PL intensity but do not change PL spectra shape. Chemical composition of structural luminescent-active complexes with excess Si atomes is determined by XPS technique.
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Taxonomy
TopicsSilicon Nanostructures and Photoluminescence · Silicon Effects in Agriculture · Selenium in Biological Systems