Fano interference effect on the transition spectrum of single electron transistors

TL;DR

This paper theoretically investigates how Fano interference affects the transition spectrum of single electron transistors with quantum dots, revealing significant impacts on spectral peaks and intensities.

Contribution

It introduces a theoretical model using nonequilibrium Green's functions and the Anderson model to analyze Fano interference in SETs with quantum dots.

Findings

Fano interference significantly shifts spectral peak positions.

Fano interference alters the intensity of the infrared spectrum.

Nonradiative coupling between excited states is crucial for spectral features.

Abstract

We theoretically study the intraband transition spectrum of single electron transistors (SETs) composed of individual self-assembled quantum dots. The polarization of SETs is obtained by using the nonequilibrium Green's function technique and the Anderson model with three energy levels. Owing to nonradiative coupling between two excited states through the continuum of electrodes, the Fano interference effect significantly influences the peak position and intensity of infrared wavelength single-photon spectrum.