Hall effect of quasi-hole gas in organic single-crystal transistors

TL;DR

This paper reports the detection of the Hall effect in organic single-crystal transistors, revealing a two-dimensional hole-gas behavior and providing insights into charge transport mechanisms in organic semiconductors.

Contribution

It demonstrates the presence of a normal Hall effect in organic transistors, indicating a 2D hole-gas system rather than hopping carriers, which is a novel observation.

Findings

Inverse Hall coefficient matches induced charge

Hall effect indicates 2D hole-gas behavior

Charge transport differs from hopping conduction

Abstract

Hall effect is detected in organic field-effect transistors, using appropriately shaped rubrene (C42H28) single crystals. It turned out that inverse Hall coefficient, having a positive sign, is close to the amount of electric-field induced charge upon the hole accumulation. The presence of the normal Hall effect means that the electromagnetic character of the surface charge is not of hopping carriers but resembles that of a two-dimensional hole-gas system.