Effects of strain, electric, and magnetic fields on lateral electron spin transport in semiconductor epilayers
M. Hruska, S. Kos, S. A. Crooker, A. Saxena, and D. L. Smith

TL;DR
This paper develops a comprehensive spin-drift-diffusion model for electron spin transport in strained zincblende semiconductors under electric and magnetic fields, validated by experimental Kerr microscopy data.
Contribution
It introduces a semiclassical kinetic theory-based model that accurately predicts spin transport phenomena in strained semiconductors with magnetic and electric fields, including experimental validation.
Findings
Spin-strain coupling depends linearly on electron wave vector.
Spin-magnetic coupling is independent of electron wave vector.
Spin precession coherence is better maintained with strain than magnetic fields.
Abstract
We construct a spin-drift-diffusion model to describe spin-polarized electron transport in zincblende semiconductors in the presence of magnetic fields, electric fields, and off-diagonal strain. We present predictions of the model for geometries that correspond to optical spin injection from the absorption of circularly polarized light, and for geometries that correspond to electrical spin injection from ferromagnetic contacts. Starting with the Keldysh Green's function description for a system driven out of equilibrium, we construct a semiclassical kinetic theory of electron spin transport in strained semiconductors in the presence of electric and magnetic fields. From this kinetic theory we derive spin-drift-diffusion equations for the components of the spin density matrix for the specific case of spatially uniform fields and uniform electron density. We solve the spin-drift-diffusion…
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