Atomistic simulation of light-induced changes in hydrogenated amorphous silicon

TL;DR

This study uses ab initio molecular dynamics to simulate how hydrogenated amorphous silicon responds to light, providing insights into the microscopic mechanisms behind light-induced degradation in photovoltaics.

Contribution

It offers an improved microscopic understanding of the Staebler-Wronski effect and confirms the validity of the Hydrogen collision model in aSi:H.

Findings

Hydrogen atoms' motion under light exposure was characterized.

The study supports the Hydrogen collision model as a correct explanation.

Insights into light-induced degradation mechanisms in PV materials were gained.

Abstract

We employ ab initio molecular dynamics to simulate the response of hydrogenated amorphous silicon to light exposure (Staebler-Wronski effect). We obtain improved microscopic understanding of PV operation, compute the motion of H atoms, and modes of light-induced degradation of photovoltaics. We clarify existing models of light-induced change in aSi:H and show that the Hydrogen collision model of Branz3 is correct in essentials.