Lateral diffusive spin transport in layered structures

TL;DR

This paper develops a one-dimensional theoretical model for lateral spin transport in layered structures, accounting for lead influence and predicting optimal contact widths for enhanced magnetoresistance.

Contribution

It introduces a new 1D theory derived from 2D flow considerations, applicable to metallic and semiconductor spintronics structures, improving upon conventional models.

Findings

Predicts optimal contact width for maximum magnetoresistance

Proposes electrical measurement method for spin diffusion length

Applicable to both metallic and semiconductor layered structures

Abstract

A one dimensional theory of lateral spin-polarized transport is derived from the two dimensional flow in the vertical cross section of a stack of ferromagnetic and paramagnetic layers. This takes into account the influence of the lead on the lateral current underneath, in contrast to the conventional 1D modeling by the collinear configuration of lead/channel/lead. Our theory is convenient and appropriate for the current in plane configuration of an all-metallic spintronics structure as well as for the planar structure of a semiconductor with ferromagnetic contacts. For both systems we predict the optimal contact width for maximal magnetoresistance and propose an electrical measurement of the spin diffusion length for a wide range of materials.