Silicon nanostructures embedded in superconductor shells

TL;DR

This paper reports the discovery of high-temperature superconductivity in silicon nanostructures with boron doping, attributed to hole tunneling into negative-U boron centers at quantum well interfaces.

Contribution

It demonstrates superconductivity in silicon nanostructures created by boron diffusion, highlighting a novel mechanism involving negative-U boron centers.

Findings

Superconductivity observed at high temperatures in silicon nanostructures.

Superconductivity linked to hole tunneling into negative-U boron centers.

Silicon quantum wells confined by delta barriers exhibit superconducting properties.

Abstract

We present the findings of the superconductivity in the silicon nanostructures prepared by short time diffusion of boron of the n - type Si (100) surface. These Si - based nanostructures represent the p - type ultra-narrow self - assembled silicon quantum wells confined by the delta - barriers heavily with boron. The resistivity, thermo - emf and magnetic susceptibility studies show that the high temperature superconductivity observed seems to result from the single - hole tunnelling into the negative - U boron centres at the silicon quantum well - delta - barier interfaces.