Dynamics of Impurity and Valence Bands in GaMnAs within the Dynamical Mean Field Approximation

TL;DR

This paper investigates the electronic structure of GaMnAs using dynamical mean-field theory, focusing on impurity and valence band dynamics influenced by spin-orbit coupling and magnetic interactions.

Contribution

It introduces a detailed model that captures the effects of spin-orbit coupling and exchange interactions on impurity and valence bands in GaMnAs within the dynamical mean-field approximation.

Findings

Impurity and quasi-particle bands are characterized in different magnetic phases.

Carrier polarization is maximized when carriers move parallel to the magnetization.

The model reveals anisotropic angular distribution of impurity band carriers.

Abstract

We calculate the density-of-states and the spectral function of GaMnAs within the dynamical mean-field approximation. Our model includes the competing effects of the strong spin-orbit coupling on the J=3/2 GaAs hole bands and the exchange interaction between the magnetic ions and the itinerant holes. We study the quasi-particle and impurity bands in the paramagnetic and ferromagnetic phases for different values of impurity-hole coupling at the Mn doping of x=0.05. By analyzing the anisotropic angular distribution of the impurity band carriers at T=0, we conclude that the carrier polarization is optimal when the carriers move along the direction parallel to the average magnetization.