Modelling of Pyroelectric Response in Inhomogeneous Ferroelectric-Semiconductor Films
A.N. Morozovska, E.A. Eliseev, D. Remiens, C. Soyer

TL;DR
This paper develops a modified Landau-Khalatnikov model to describe the pyroelectric response of inhomogeneous ferroelectric-semiconductor films, capturing the effects of disorder and defects on hysteresis behavior.
Contribution
It introduces a set of six coupled equations for inhomogeneous pyroelectric response, explaining the transition from sharp to smooth hysteresis loops due to defects.
Findings
Pyroelectric hysteresis loops become smoother and lower with increased disorder.
Defect concentration reduces coercive field and peak pyroelectric response.
Model shows good agreement with experimental data on Pb(Zr,Ti)O3 films.
Abstract
We have modified Landau-Khalatnikov approach and shown that the pyroelectric response of inhomogeneous ferroelectric-semiconductor films can be described by using six coupled equations for six order parameters: average displacement, its mean-square fluctuation and correlation with charge defects density fluctuations, average pyroelectric coefficient, its fluctuation and correlation with charge defects density fluctuations. Coupled equations demonstrate the inhomogeneous reversal of pyroelectric response in contrast to the equations of Landau-Khalatnikov type, which describe the homogeneous reversal with the sharp pyroelectric coefficient peak near the thermodynamic coercive field value. Within the framework of our model pyroelectric hysteresis loop becomes much smoother, thinner and lower as well as pyroelectric coefficient peaks near the coercive field completely disappear under the…
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Taxonomy
TopicsFerroelectric and Piezoelectric Materials · Acoustic Wave Resonator Technologies · Multiferroics and related materials
