Magnetoresistance oscillations in GaAs/AlGaAs superlattices subject to in-plane magnetic fields

TL;DR

This study investigates magnetoresistance oscillations in GaAs/AlGaAs superlattices under in-plane magnetic fields, revealing a transition from 3D to 2D behavior and validating a tight-binding model with experimental data.

Contribution

The paper introduces a simple tight-binding model to interpret magnetoresistance data and reconstruct the superlattice Fermi surface, confirming the model's accuracy with experimental results.

Findings

Reconstructed superlattice Fermi surface from magnetoresistance data

Identified van Hove singularities matching oscillation positions

Validated tight-binding model for strongly coupled superlattices

Abstract

The MBE-grown GaAs/AlGaAs superlattice with Si-doped barriers has been used to study a 3D-2D transition under the influence of the in-plane component of applied magnetic field. The longitudinal magnetoresistance data measured in tilted magnetic fields have been interpreted in terms of a simple tight-binding model. The data provide values of basic parameters of the model and make it possible to reconstruct the superlattice Fermi surface and to calculate the density of states for the lowest Landau subbands. Positions of van Hove singularities in the DOS agree excellently with magnetoresistance oscillations, confirming that the model describes adequately the magnetoresistance of strongly coupled semiconductor superlattices.