An ion-implanted silicon single-electron transistor

TL;DR

This paper presents a novel silicon single-electron transistor fabricated via ion implantation, demonstrating Coulomb blockade and controllable tunnel coupling at millikelvin temperatures, advancing silicon-based quantum device technology.

Contribution

It introduces a new silicon SET device fabricated with CMOS-compatible ion implantation, showing reproducible Coulomb blockade and tunable tunnel coupling.

Findings

Demonstrates Coulomb blockade with ~250 μeV charging energy

Shows controllable tunnel coupling via surface gates

Uses CMOS processing techniques for fabrication

Abstract

We report on the fabrication and electrical characterization at millikelvin temperatures of a novel silicon single-electron transistor (Si-SET). The island and source-drain leads of the Si-SET are formed by the implantation of phosphorus ions to a density above the metal-insulator-transition, with the tunnel junctions created by undoped regions. Surface gates above each of the tunnel junctions independently control the tunnel coupling between the Si-SET island and leads. The device shows periodic Coulomb blockade with a charging energy e$^2$/2C$_\Sigma$ $\sim$ 250 $\mu$eV, and demonstrates a reproducible and controllable pathway to a silicon-based SET using CMOS processing techniques.