Effect of axial electric field on the binding energy of a shallow hydrogenic impurity in a Quantum Well Wire

TL;DR

This paper investigates how an axial electric field influences the binding energy of a shallow hydrogenic impurity in GaAs/Ga_{1-x}Al_{x}As quantum well wires, considering wire length and radius effects.

Contribution

It provides a detailed analysis of electric field effects on impurity binding energy in quantum well wires, a novel focus in nanostructure research.

Findings

Electric field modifies impurity binding energy significantly.

Quantum wire dimensions affect the impurity binding energy.

Results aid in designing nanostructures with tailored electronic properties.

Abstract

We present a study of the effect of an electric field on the binding energy of a shallow hydrogenic impurity in GaAs/Ga_{1-x}Al_{x}As quantum well wires. The wire is considered to be of length L and radius R and the electric field F is applied along the z-axis, the axis of the wire.