Buffer-Enhanced Electrical-Pulse-Induced-Resistive Memory Effect in Thin Film Perovskites

TL;DR

This study presents a multilayer perovskite thin film resistive memory device with a buffer layer that enhances switching performance and demonstrates colossal magnetoresistance behavior, advancing resistive memory technology.

Contribution

Introduction of a buffer layer in multilayer perovskite resistive memory devices that reduces switching voltage and increases resistance ratio, with detailed structural and magnetic analysis.

Findings

Buffer layer reduces switching voltage.

Resistance ratio is significantly increased.

Device exhibits colossal magnetoresistance behavior.

Abstract

A multilayer perovskite thin film resistive memory device has been developed comprised of: a Pr0.7Ca0.3MnO3 (PCMO) perovskite oxide epitaxial layer on a YBCO bottom thin film electrode; a thin yttria stabilized zirconia (YSZ) buffer layer grown on the PCMO layer, and a gold thin film top electrode. The multi-layer thin film lattice structure has been characterized by XRD and TEM analyses showing a high quality heterostructure. I-AFM analysis indicated nano granular conductivity distributed uniformly throughout the PCMO film surface. With the addition of the YSZ buffer layer, the pulse voltage needed to switch the device is significantly reduced and the resistance-switching ratio is increased compared to a non-buffered resistance memory device, which is very important for the device fabrication. The magnetic field effect on the multilayer structure resistance at various temperatures shows CMR behavior for both high and low resistance states implying a bulk material component to the switch behavior.