Simulation of Arsenic Diffusion During Rapid Thermal Annealing of Silicon Layers Doped with Low-Energy High-Dose Ion Implantation

TL;DR

This paper presents a numerical model for simulating arsenic diffusion in silicon during rapid thermal annealing, accounting for defect distributions and clustering, with results aligning well with experimental data.

Contribution

It introduces a finite-difference model that incorporates defect nonuniformity and arsenic clustering for more accurate diffusion simulation.

Findings

Simulation results agree with experimental data

Model captures defect distribution effects

Enhanced understanding of arsenic diffusion mechanisms

Abstract

The model of transient enhanced diffusion of ion-implanted As is formulated and the finite-difference method for numerical solution of the system of equations obtained is developed. The nonuniform distribution of point defects near the interface and more accurate description of arsenic clustering are simultaneously taking into account. Simulation of As diffusion during rapid annealing gives a reasonable agreement with the experimental data. Keywords: diffusion; clusters; ion implantation; arsenic; silicon PACS: 66.30.Jt