Detection of spin voltaic effect in a p-n heterojunction

TL;DR

This paper reports the detection of the spin voltaic effect in a heterojunction, demonstrating polarization-dependent photocurrent signals that could enable semiconductor-based spin-polarization detectors.

Contribution

It provides both model calculations and experimental evidence of SVE in a heterostructure, highlighting its potential for spin-photodiode applications.

Findings

SVE survives across the heterojunction under forward bias.

Polarization-dependent photocurrent signals exceed magnetic circular dichroism signals.

Optimization of layer parameters can enhance SVE for device applications.

Abstract

Model calculation and experimental data of circularly-polarized-light-dependent photocurrent in a n-AlGaAs/p-InGaAs/p-GaAs heterostructure are reported. It is found that, under the appropriate forward bias condition, spin voltaic effect (SVE) can survive across the heterojunction and give rise to detectable polarization-dependent photocurrent signals which are greater than the signals due to the magnetic circular dichroism. Our analysis suggests that SVE can be enhanced by optimization of layer thickness, doping profile, and applied bias, making SVE favorable for the realization of a semiconductor-based polarization detector, a spin-photodiode (spin-PD).