Observation of one electron charge in an enhancement-mode InAs single electron transistor at 4.2K

TL;DR

This paper reports the experimental observation of single-electron charge in an InAs quantum dot device at 4.2K, demonstrating large quantization and Coulomb energies relevant for quantum computing.

Contribution

It introduces a novel single-electron quantum dot design with a narrow band gap quantum well capable of transitioning between hole and electron regimes.

Findings

Observed single-electron charge at 4.2K

Measured quantization and Coulomb energies over 10meV

Proposed quantum dot structure for scalable quantum computing

Abstract

We propose and demonstrate experimentally a novel design of single-electron quantum dots. The structure consists of a narrow band gap quantum well that can undergo a transition from the hole accumulation regime to the electron inversion regime in a single-top-gate transistor configuration. We have observed large size quantization and Coulomb charging energies over 10meV. This quantum dot design can be especially important for scalable quantum computing.