About low field memory and negative magnetization in semiconductors and polymers
I. Bulyzhenkov, A.-M. Lamarche, G. Lamarche

TL;DR
This paper explores the phenomenon of negative magnetization in semiconductors and polymers, analyzing how coupled magnetic subsystems and sample history influence magnetic properties and potential switching at ambient temperatures.
Contribution
It introduces a theoretical framework linking Ginzburg-Landau magnetization with localized moments, explaining negative remnant magnetization and susceptibility in complex materials.
Findings
Negative remnant magnetization depends on magnetic history.
Coupled subsystems exhibit positive susceptibility despite negative magnetization.
Gauss-scale fields could enable switching between magnetic states at room temperature.
Abstract
Ginzburg-Landau bulk magnetization of itinerant electrons can provide a negative effective field in the Weiss model by coupling to localized magnetic moments. The coupling enforces remnant magnetization, which can be negative or positive depending on the sample magnetic history. Stable magnetic susceptibility of coupled nonequilibrium subsystems with magnetization reversal is always positive. Gauss-scale fields could be expected for switching between negative and positive remnant moments in semiconductors with coupling at ambient temperatures. Negative magnetization in ultra-high conducting polymers is also discussed within the developed framework.
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