A comparison of the resistivity behavior of MgB2, AlB2 and AgB2 systems
R. Lal, V.P.S. Awana, K. P. Singh, H. Kishan (NPL, New Delhi, India), and A.V. Narlikar (IUC, Indore, India)
TL;DR
This study compares the resistivity behaviors of MgB2, AlB2, and AgB2, revealing how impurities and scattering mechanisms influence their electrical properties.
Contribution
It provides a comparative analysis of resistivity and scattering effects in MgB2, AlB2, and AgB2, highlighting the dominant mechanisms in each system.
Findings
AlB2 shows maximum impurity and electron-phonon effects.
AgB2 exhibits minimal impurity and weak localization effects.
MgB2's resistivity behavior is intermediate among the three.
Abstract
Measurements have been performed of the resistivity of the samples of MgB2, AlB2 and AgB2. The samples show presence of impurities. Analyzing the data in terms of the impurity scattering, electron-phonon scattering, and weak localization it has been found that the AlB2 (AgB2) sample involves maximum (minimum) effect of the impurity, electron-phonon interaction and weak localization.
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