Spin-dependent tunneling through a symmetric semiconductor barrier: the Dresselhaus effect

TL;DR

This paper analyzes how the Dresselhaus effect influences spin-dependent tunneling in symmetric semiconductor barriers, providing analytical expressions and highlighting significant enhancements in spin polarization and interface current.

Contribution

It introduces an analytical approach to include the k^3 Dresselhaus effect in spin-dependent tunneling calculations, showing its impact on spin polarization and current.

Findings

Dresselhaus effect significantly enhances spin polarization.

Including off-diagonal current elements alters tunneling predictions.

Analytical expressions for spin-dependent transmission are derived.

Abstract

Spin-dependent tunneling through a symmetric semiconductor barrier is studied including the k^3 Dresselhaus effect. The spin-dependent transmission of electron can be obtained analytically. By comparing with previous work(Phys. Rev. B 67. R201304 (2003) and Phys. Rev. Lett. 93. 056601 (2004)), it is shown that the spin polarization and interface current are changed significantly by including the off-diagonal elements in the current operator, and can be enhanced considerably by the Dresselhaus effect in the contact regions.