Hysteretic memory effects in disordered magnets

TL;DR

This paper investigates hysteretic memory effects in disordered magnets using simple Ising models, demonstrating that increased disorder enhances memory effects and that return point memory surpasses complementary point memory.

Contribution

It shows that simple Ising spin models can replicate experimental hysteretic memory effects and their dependence on disorder.

Findings

Memory effects increase with disorder

Return point memory exceeds complementary point memory

Simple models reproduce experimental results

Abstract

We study the return point as well as the complementary point memory effects numerically with paradigmatic models for random magnets and show that already simple systems with Ising spin symmetry can reproduce the experimental results of Pierce et al. where both memory effects become more pronounced for increasing disorder and return point memory is always better than complementary point memory.