Covalent bonding and the nature of band gaps in some half-Heusler compounds
Hem Chandra Kandpal, Claudia Felser, and Ram Seshadri

TL;DR
This paper systematically examines the band gaps and bonding nature in half-Heusler compounds using first-principles calculations, revealing covalent bonding patterns and valence rules that explain electronic structures and magnetic properties.
Contribution
It introduces a valence-based covalent bonding model for half-Heusler compounds, linking band gaps to electronegativity differences and extending to magnetic phases.
Findings
Band gaps correlate with electronegativity differences.
Bonding can be described as a YZ zinc blende lattice stuffed by X.
Magnetic phases exhibit spin-dependent band gaps.
Abstract
Half-Heusler compounds \textit{XYZ}, also called semi-Heusler compounds, crystallize in the MgAgAs structure, in the space group . We report a systematic examination of band gaps and the nature (covalent or ionic) of bonding in semiconducting 8- and 18- electron half-Heusler compounds through first-principles density functional calculations. We find the most appropriate description of these compounds from the viewpoint of electronic structures is one of a \textit{YZ} zinc blende lattice stuffed by the \textit{X} ion. Simple valence rules are obeyed for bonding in the 8-electron compound. For example, LiMgN can be written Li + (MgN), and (MgN), which is isoelectronic with (SiSi), forms a zinc blende lattice. The 18-electron compounds can similarly be considered as obeying valence rules. A semiconductor such as TiCoSb can be written Ti + (CoSb); the…
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.
