Electronic structure and transport properties of La_0.7Ce_0.3MnO_3

TL;DR

This study investigates the electronic structure and transport properties of La_0.7Ce_0.3MnO_3 thin films using spectroscopy and Hall effect measurements, revealing Fermi level shifts and hole-like carriers consistent with theoretical calculations.

Contribution

It provides experimental validation of electronic structure predictions for La_0.7Ce_0.3MnO_3, highlighting the effects of Ce doping on Fermi level and carrier characteristics.

Findings

Ce doping shifts the Fermi level upward.

Carriers in La_0.7Ce_0.3MnO_3 are hole-like.

Optical spectra disprove La-deficient phase dominance.

Abstract

X-ray absorption spectroscopy (XAS), optical reflectance spectroscopy, and the Hall effect measurements were used to investigate the electronic structure in La_0.7Ce_0.3MnO_3 thin films (LCeMO). The XAS results are consistent with those obtained from LDA+U calculations. In that the doping of Ce has shifted up the Fermi level and resulted in marked shrinkage of hole pockets originally existing in La_0.7Ca_0.3MnO_3 (LCaMO). The Hall measurements indicate that in LCeMO the carriers are still displaying the characteristics of holes as LDA+U calculations predict. Analyses of the optical reflectance spectra evidently disapprove the scenario that the present LCeMO might have been dominated by the La-deficient phases.