Crossover from diffusive to ballistic transport in semiconductor nanostructures

TL;DR

This paper investigates the transition from diffusive to ballistic electron transport in semiconductor nanostructures using a microscopic approach based on the Boltzmann and Poisson equations, highlighting signatures in electrostatic and electron distribution responses.

Contribution

It provides a detailed theoretical and computational analysis of the crossover between diffusive and ballistic regimes in semiconductor channels, identifying key signatures in various physical responses.

Findings

Identification of signatures in electrostatic response due to transport regime

Analysis of electron density variations across the crossover

Self-consistent modeling of nonequilibrium electron distribution

Abstract

We present a detailed microscopic study of quasi-ballistic transport in deep submicron semiconductor channels. In particular, we study the crossover between the diffusive and ballistic regimes of transport and identify signatures in the electrostatic response, electron density, and nonequilibrium electron distribution function that are due to ballistic and diffusive transport, respectively. Our theoretical and computational approach is based on the Boltzmann transport equation for a nondegenerate electron system, together with the Poisson equation, from which we obtain the nonequilibrium electron distribution in a self-consistent way.