Microwave Nanotube Transistor Operation at High Bias

TL;DR

This study measures the high-frequency conductance of a carbon nanotube transistor at various bias voltages, demonstrating its potential for RF applications by showing consistent conductance across frequencies up to 1 GHz.

Contribution

It provides the first detailed characterization of nanotube transistor dynamical conductance at high bias and high frequency, supporting their use in microwave devices.

Findings

Intrinsic conductance remains constant at 1 GHz across bias voltages

Cutoff frequency exceeds 1 GHz, indicating high-speed operation

Supports nanotube transistors for RF and microwave amplification

Abstract

We measure the small signal, 1 GHz source-drain dynamical conductance of a back-gated single-walled carbon nanotube field effect transistor at both low and high dc bias voltages. At all bias voltages, the intrinsic device dynamical conductance at 1 GHz is identical to the low frequency dynamical conductance, consistent with the prediction of a cutoff frequency much higher than 1 GHz. This work represents a significant step towards a full characterization of a nanotube transistor for RF and microwave amplifiers.