Bipolariton laser emission from a GaAs microcavity

TL;DR

This paper reports the observation of bipolariton laser emission in a GaAs microcavity, demonstrating a new lasing mode with distinct spectral and spatial properties at low temperatures.

Contribution

It introduces the experimental detection of bipolariton emission in a GaAs microcavity and characterizes its properties, expanding understanding of polariton-related lasing phenomena.

Findings

Bipolariton emission appears near the lower polariton mode at high pump intensities.

The bipolariton mode exhibits laser-like behavior with narrow linewidths below 150 μeV.

Bipolariton emission shows weaker coupling efficiency and is spatially separated from polariton emission.

Abstract

Biexciton emission properties were studied in a single GaAs quantum well semiconductor planar microcavity by photoluminescence measurements at low temperatures. At high pump intensity a bipolariton emission appears close to the lower polariton mode. This new mode appears when we detune the cavity resonance out of the lower polariton branch, showing a laser like behavior. Very small lines widths were measured, lying below 110 μeV and 150 μeV for polariton and bipolariton emission respectively. The input/output power (I/O) measurements show that the bipolariton emission has a weaker coupling efficiency compared to previous results for polariton emission. Simultaneous photoluminescence and near field measurements show that the polariton and bipolariton emission are spectrally and spatially separated.