Interfaces of correlated electron systems: Proposed mechanism for colossal electroresistance

TL;DR

This paper investigates Mott's metal-insulator transition at interfaces using DMRG and proposes a new mechanism for colossal electroresistance that accounts for hysteresis effects in higher dimensions.

Contribution

It introduces a simplified model for interface transitions and proposes a novel mechanism explaining colossal electroresistance with hysteretic behavior.

Findings

Transition can be modeled with a modified Poisson's equation

A new hysteresis-based mechanism for electroresistance is proposed

Results align with experimental observations of colossal electroresistance

Abstract

Mott's metal-insulator transition at an interface due to band bending is studied by the density matrix renormalization group (DMRG). We show that the result can be recovered by a simple modification of the conventional Poisson's equation approach used in semi-conductor heterojunctions. A novel mechanism of colossal electroresistance is proposed, which incorporates the hysteretic behavior of the transition in higher dimensions.