Planar Hall Effect MRAM
Y. Bason, L. Klein, J.-B. Yau, X. Hong, J. Hoffman, C. H. Ahn
TL;DR
This paper introduces a novel MRAM design utilizing the planar Hall effect in magnetic films, offering a simpler alternative to traditional tunnel junction-based MRAMs, demonstrated with manganite films.
Contribution
It proposes and demonstrates a new MRAM architecture based on the planar Hall effect, simplifying the structure compared to existing magnetoresistance tunnel junction MRAMs.
Findings
Successful demonstration with manganite films
Simpler structural design than traditional MRAMs
Potential for easier manufacturing and integration
Abstract
We suggest a new type of magnetic random access memory (MRAM) that is based on the phenomenon of the planar Hall effect (PHE) in magnetic films, and we demonstrate this idea with manganite films. The PHE-MRAM is structurally simpler than currently developed MRAM that is based on magnetoresistance tunnel junctions (MTJ), with the tunnel junction structure being replaced by a single layer film.
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Taxonomy
TopicsMagnetic Field Sensors Techniques · Non-Destructive Testing Techniques · Characterization and Applications of Magnetic Nanoparticles