Concept of deterministic single ion doping with sub-nm spatial resolution

TL;DR

This paper introduces a method for precisely implanting single ions into solids with sub-nanometer accuracy, enabling advanced quantum and nano-electronic device fabrication.

Contribution

It presents a novel deterministic ion implantation technique using a linear ion trap for sub-nanometer spatial resolution, applicable to nearly all chemical elements.

Findings

Achieves <1 nm spatial resolution in ion implantation

Allows deterministic control over the number of implanted atoms

Applicable to various elements for quantum and nano-electronic applications

Abstract

We propose a method for deterministic implantation of single atoms into solids which relies on a linear ion trap as an ion source. Our approach allows a deterministic control of the number of implanted atoms and a spatial resolution of less than 1 nm. Furthermore, the method is expected to work for almost all hemical elements. The deterministic implantation of single phosphor or nitrogen atoms is interesting for the fabrication of scalable solid state quantum computers, in particular for silicon and diamond based schemes. A wide range of further applications is expected for the fabrication of nano and sub-nano electric devices.