Charge Tunneling Rates in Ultrasmall Junctions
Gert-Ludwig Ingold (Augsburg), Yu. V. Nazarov (Delft)
TL;DR
This paper investigates charge tunneling rates in ultrasmall junctions, analyzing how electromagnetic environments and device configurations influence electron tunneling, with a focus on theoretical foundations and practical implications.
Contribution
It provides a comprehensive theoretical framework for understanding charge tunneling rates across various ultrasmall junction devices and environments.
Findings
Tunneling rates depend on electromagnetic environment characteristics.
Electromagnetic environment influences tunneling in Josephson junctions.
Microscopic foundations clarify charge transfer mechanisms.
Abstract
1. Introduction 2. Description of the environment 3. Electron tunneling rates for single tunnel junctions 4. Examples of electromagnetic environments 5. Tunneling rates in Josephson junctions 6. Double junction and single electron transistor 7. Microscopic foundation
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Taxonomy
TopicsSurface and Thin Film Phenomena · Quantum and electron transport phenomena · Semiconductor Quantum Structures and Devices