Coaxial p- and n-type carbon nanotube transistors with dopant-selective coatings

TL;DR

This paper reports on the fabrication of coaxial p- and n-type carbon nanotube FETs with dopant-selective coatings, demonstrating ballistic transport and scalable production of high-performance devices for active circuits.

Contribution

It introduces dopant-selective coatings for creating complementary p- and n-type nanotube transistors, advancing scalable fabrication of carbon nanotube FETs.

Findings

Ballistic transport observed in coated structures

High-performance SWNT FETs achieved through patterned growth and electrical breakdown

Successful realization of complementary p- and n-type devices

Abstract

Carbon nanotube field-effect transistors (FETs) with passivated coaxial gate structures have been fabricated after growth of contacted suspended single wall nanotubes (SWNTs) and subsequent coating with gate dielectrics. Electron Fabry-Perot interferences are observed in the FETs indicating ballistic transport in the coated structures. Reliable production of high-performance SWNT FETs has been obtained by combining patterned growth of SWNT arrays with feed-back controlled electrical breakdown to select desired semiconducting SWNTs, making large-scale SWNT FET fabrication achievable. P-type and n-type passivated SWNT FETs have been realized through dopant-selective nanotube coatings, which enables the fabrication of active circuits based on complementary device structures.